PART |
Description |
Maker |
2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A) Medium Power Transistor (?32V,?1A) Power Transistor (?60V, ?3A) Low-frequency Transistor (-80V, -0.5A) Power Transistor (?80V, ?1A) Low VCE(sat) Transistor (?20V, ?3A) Power transistor (?20V, ?2A) General purpose amplification (?30V, ?1A) Low frequency amplifier Medium power transistor (−60V, −0.5A)
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ROHM[Rohm]
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2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62 From old datasheet system Medium Power Transistor (-32A,-1A) Transistors > Small Signal Bipolar Transistors(up to 0.6W) Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
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Rohm Co., Ltd. Rohm CO.,LTD. ROHM[Rohm]
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2SC1741AS 2SD1484 2SD1484K A5800323 2SC3359S 2SC33 |
50V,0.5A medium power transistor Transistors > Small Signal Bipolar Transistors(up to 0.6W) Medium Power Transistor (50V, 0.5A) From old datasheet system Medium Power Transistor (50V/ 0.5A) SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SPAK TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SPAK SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 50V五(巴西)总裁| 500mA的一(c)| SPAK
|
Rohm
|
FXT458 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR From old datasheet system
|
ZETEX[Zetex Semiconductors]
|
2SC2982 E000777 |
TRANSISTOR (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) 晶体管(STOROBO闪光,中等功率放大器应用 TRANSISTOR (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system
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Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
DXT2014P5-13 DXT2014P5-15 |
140V PNP MEDIUM POWER TRANSISTOR PowerDI庐5 140V PNP MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
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2N3209DCSM |
Dual High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型双PNP晶体管(高可靠性、陶瓷表贴封装)) DUAL HIGH SPEED/ MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
FMMT589 FMMT589TA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V 30V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 30V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23
|
Diodes Incorporated
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